This is a Samsung 64M bit x 64 Double Data Rate SDRAM high density memory modules. The Samsung consists of 16 CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. It is Dual In-line Memory Modules and intended for mounting into 184pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• 512MB 400MHz DDR PC3200 DIMM 184-Pin CL2.5 Non-ECC
• Power supply : Vdd: 2.5V 0.2V, Vddq: 2.5V 0.2V
• Samsung Part Number M368L6423DTM-CC40
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and /CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 (mil)