STRONTIUM Hynix 8GB Sodimm Single DDR3 1600Mhz laptop RAM 

· JEDEC standard nominal Voltage, 1.35 V operable and 1.5 V endurant
· 1.5V center-terminated push/pull I/O
· Differential bidirectional data strobe
· 8n-bit prefetch architecture
· Differential clock inputs (CK, CK#)
· 8 internal banks
· Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
· Programmable CAS READ latency (CL)
· Posted CAS additive latency (AL)
· Programmable CAS WRITE latency (CWL) based on tCK
· Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
· Programmable CAS latency 9, 10 ,11 supported
· Programmable additive latency 0, CL-1, and CL-2 supported
· Programmable CAS Write latency (CWL) = 9, 10, 11
· Selectable BC4 or BL8 on-the-fly (OTF)
· Self refresh mode
· Average Refresh Cycle (Tcase of 0 °C to 95 °C) 
- 64ms, 8192 cycle refresh at 0°C to 85°C
- 32ms, 8192 cycle refresh at 85°C to 95°C
· Self refresh temperature (SRT)
· Write leveling
· Multipurpose register
· Output driver calibration
· JEDEC standard 78ball FBGA(x4/x8)
· RoHS compliant